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2SD0602A|2SD602A Datasheet

  • 2SD0602A|2SD602A

  • Small-signal device - Small-signal transistor - General-use ...

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Transistors
2SD0602A
(2SD602A)
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB0710A (2SB710A)
鈻?/div>
Features
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1
0.40
+0.10
鈥?.05
3
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
Unit: mm
0.16
+0.10
鈥?.06
2
(0.65)
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
10藲
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
60
50
5
500
1
200
150
鈭?5
to
+150
Unit
V
V
V
mA
A
mW
擄C
擄C
1.1
+0.2
鈥?.1
1.1
+0.3
鈥?.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Marking symbol X
錛?/div>
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
10 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
= 10 V, I
C
= 150 mA
V
CE
=
鈭?0
V, I
C
= 500 mA
I
C
= 300
mA, I
B
=
30 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
60
50
5
Typ
0 to 0.1
Max
Unit
V
V
V
碌A(chǔ)
錚?/div>
V
MHz
pF
0.1
85
40
0.35
200
6
15
0.6
340
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Marking symbol
Q
85 to 170
XQ
R
120 to 240
XR
S
170 to 340
XS
No rank
85 to 340
X
Product of no-rank is not classified and have no indication for rank.
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00191CED
0.4
鹵0.2
5藲
1

2SD0602A|2SD602A相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Transistor
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    TRANSISTOR (NPN)
    金譽(yù)
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    For Medium-Power General Amplification
    PANASONIC
  • 英文版
    For Medium-Power General Amplification
    PANASONIC ...
  • 英文版
    Transistor
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency And Low-Noise Amplification
    PANASONIC

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